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首页贴片晶振 NEL Oscillator的热分析与三态输入

NEL Oscillator的热分析与三态输入

来源:http://www.jinluodz.com 作者:金洛鑫电子 2019年06月17
启用/禁用-三态控制输入
   IIL和IIHAp-Note:
   当逻辑低电平施加到Oscillator的控制输入时,IIL是流入或流出控制输入的电流(通常在控制输入之外);当逻辑高电平施加到振荡器的控制输入时,IIH是流入或流出控制输入(通常进入控制输入)的电流.
NELFM.png
影响控制输入电流的两个主要因素:
   1.IC设计和相关阻抗.
   2.在石英晶体振荡器封装内部添加任何上拉或下拉电阻.
NEL使用两种不同的控制输入特性:
   1.振荡器封装内部不使用IC外部的额外电阻.因此,IIL和IIH仅由IC特性定义.对于CMOS输入,这通常在微安范围内.
   2.在某些CMOS输入上使用额外的上拉电阻,以允许晶振工作,而无需外部连接到控制输入.通常选择该值足够低以将TTL栅极输出上拉至高于控制输入的阈值电压的电压.由于这个上拉电阻,IIL通常基于欧姆定律在毫安范围内.NEL通常使用1.2kΩ±20%上拉电阻来确保某些控制输入的电平.这意味着在5V±10%的电源上,IIL可以通过电阻器高达5.7mA.IIH没有受到显着影响,仍然依赖于IC设计.
   IIL is the current flow in or out of the control input (normally out of the control input) when a logic low is applied to the control input of the oscillator.
   IIH is the current flow in or out of the control input (normally in to the control input) when a logic high is applied to the control input of the oscillator.
   Two major factors affect the control input current flow:
   1.The IC design and associated impedances.
   2.Addition of any pull-up or pull-down resistors internal to our oscillator package.
   NEL uses two different control input characteristics:
   1.No additional resistors external to the IC are used inside the oscillator package. Thus, IIL & IIH are defined by just the IC characteristics. For CMOS inputs this is usually in the microamp range.
   2.An additional pull-up resistor is used on some CMOS inputs to allow operation of the oscillator with no external connection to the control input. The value is often selected to be low enough to pull-up a TTL gate output to a voltage higher than the threshold voltage of the control input. Because of this pull-up resistor, IIL is often in the milliamp range based on ohms law. NEL typically uses a 1.2k ohm ±20% pull-up resistor to assure proper levels on some control inputs. This means on a 5V±10% power supply, the I IL could be as high as 5.7mA just through the resistor. IIH is not significantly affected and is still dependent on the IC design.
热分析:
   在HJ-100有源贴片晶振上进行热测量.IC尺寸为0.050’×0.050’.测量的区域是基板的顶部,封装的底部和IC.结果如下:
   环境空气=24.2°C
   封装温度=26.2°C
   基板温度=26.7℃
   IC温度=27.2°C
   功耗=76.6mwatts
   根据这些测量结果,计算出以下热阻:
   封装至空气i=26.11°C/瓦
   IC至基板i=6.53°C/瓦
   封装至基板i=6.53°C/瓦
   IC至封装i=13.05°C/瓦
   ICtoAiri=39.16°C/瓦
   空气被定义为自由不受控制的空气.
   Thermal measurements were made on an HJ-100 oscillator. IC size was 0.050" X 0.050". Areas measured were the top of the substrate, bottom of the package, and the IC. The results are as follows:
   Ambient Air=24.2°C
   Package Temperature=26.2°C
   Substrate Temperatur=26.7°C
   IC Temperature=27.2°C
   Power Dissipation=76.6mwatts
   Based on these measurements,the following thermal resistances were calculated:
   Package to Air i=26.11°C/watt
   IC to Substrate i=6.53°C/watt
   Package to Substrate i=6.53°C/watt
   IC to Package i=13.05°C/watt
   IC to Air i=39.16°C/watt
   Air is defined to be free uncontrolled air.

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