Microchip高性能可编程振荡器与硅MEMS技术有何关联之处?DSC1122BE1-025.0000

Microchip高性能可编程振荡器与硅MEMS技术有何关联之处?DSC1122BE1-025.0000，Microchip Technology Inc. is a leading provider of microcontroller and analog semiconductors, providing low-risk product development, lower total system cost and faster time to market for thousands of diverse customer applications worldwide. Headquartered in Chandler, Arizona, Microchip offers outstanding technical support along with dependable delivery and quality.
Microchip Technology Inc .是微控制器和模拟半导体的领先供应商，为全球数千种不同的客户应用提供低风险有源晶振产品开发、更低的总系统成本和更快的上市时间。总部设在亚利桑那州钱德勒，微芯片提供卓越的技术支持以及可靠的交付和质量。

Microchip高性能可编程振荡器与硅MEMS技术有何关联之处?DSC1122BE1-025.0000，Microchip晶振公司发布编码DSC1122BE1-025.0000，DSC1102和DSC1122系列高性能振荡器利用成熟的硅MEMS技术，在宽电源电压和温度范围内提供出色的抖动和稳定性。通过消除对石英或SAW技术的需求，MEMS振荡器显著提高了可靠性并加快了产品开发，同时满足各种通信、存储和网络应用的严格时钟性能标准。DSC1102具有待机特性，当en引脚被拉低时，它可以完全关断；而对于DSC1122，当en为低电平时，仅输出禁用。两款振荡器均采用工业标准封装，包括小型3.2毫米x 2.5mm毫米，是标准6引脚LVPECL石英晶体振荡器的替代产品。

Manufacturer Part Number原厂代码	Manufacturer品牌	Series型号	Part Status	Type 类型	Frequency 频率	Voltage - Supply电压
DSC1121AI1-156.2500T	Microchip可编程振荡器	DSC1121	Active	MEMS (Silicon)	156.25MHz	2.25 V ~ 3.6 V
DSC1121AI2-024.5760T	Microchip可编程振荡器	DSC1121	Active	MEMS (Silicon)	24.576MHz	2.25 V ~ 3.6 V
DSC1121AI2-200.0000T	Microchip可编程振荡器	DSC1121	Obsolete	MEMS (Silicon)	200MHz	2.25 V ~ 3.6 V
DSC1121AI5-125.0032T	Microchip可编程振荡器	DSC1121	Active	MEMS (Silicon)	125.0032MHz	2.25 V ~ 3.6 V
DSC1121AI5-125.0038T	Microchip可编程振荡器	DSC1121	Active	MEMS (Silicon)	125.0038MHz	2.25 V ~ 3.6 V
DSC1121AL2-020.0000T	Microchip可编程振荡器	DSC1121	Active	MEMS (Silicon)	20MHz	2.25 V ~ 3.6 V
DSC1121AL2-025.0000T	Microchip可编程振荡器	DSC1121	Active	MEMS (Silicon)	25MHz	2.25 V ~ 3.6 V
DSC1121BI5-050.0000T	Microchip可编程振荡器	DSC1121	Active	MEMS (Silicon)	50MHz	2.25 V ~ 3.6 V
DSC1121BI5-100.0000T	Microchip可编程振荡器	DSC1121	Active	MEMS (Silicon)	100MHz	2.25 V ~ 3.6 V
DSC1121BI5-125.0000T	Microchip可编程振荡器	DSC1121	Active	MEMS (Silicon)	125MHz	2.25 V ~ 3.6 V
DSC1121BM5-030.0000T	Microchip可编程振荡器	DSC1121	Obsolete	MEMS (Silicon)	30MHz	2.25 V ~ 3.6 V
DSC1121CE5-100.0000T	Microchip可编程振荡器	DSC1121	Active	MEMS (Silicon)	100MHz	2.25 V ~ 3.6 V
DSC1121CE5-108.0000T	Microchip可编程振荡器	DSC1121	Active	MEMS (Silicon)	108MHz	2.25 V ~ 3.6 V
DSC1121CI2-031.2500T	Microchip可编程振荡器	DSC1121	Active	MEMS (Silicon)	31.25MHz	2.25 V ~ 3.6 V
DSC1121CL2-020.0000T	Microchip可编程振荡器	DSC1121	Active	MEMS (Silicon)	20MHz	2.25 V ~ 3.6 V
DSC1121CL2-024.7500T	Microchip可编程振荡器	DSC1121	Active	MEMS (Silicon)	24.75MHz	2.25 V ~ 3.6 V
DSC1121CL5-024.7500T	Microchip可编程振荡器	DSC1121	Active	MEMS (Silicon)	24.75MHz	2.25 V ~ 3.6 V
DSC1121CM1-027.0000T	Microchip可编程振荡器	DSC1121	Active	MEMS (Silicon)	27MHz	2.25 V ~ 3.6 V
DSC1121CM2-027.0000T	Microchip可编程振荡器	DSC1121	Active	MEMS (Silicon)	27MHz	2.25 V ~ 3.6 V
DSC1121CM2-032.0000T	Microchip可编程振荡器	DSC1121	Active	MEMS (Silicon)	32MHz	2.25 V ~ 3.6 V
DSC1121NI1-025.0000T	Microchip可编程振荡器	DSC1121	Active	MEMS (Silicon)	25MHz	2.25 V ~ 3.6 V
DSC1121NI1-065.0000T	Microchip可编程振荡器	DSC1121	Active	MEMS (Silicon)	65MHz	2.25 V ~ 3.6 V
DSC1122AE1-123.5200T	Microchip晶振	DSC1122	Active	MEMS (Silicon)	123.52MHz	2.25 V ~ 3.6 V
DSC1122AE1-312.5000T	Microchip可编程振荡器	DSC1122	Active	MEMS (Silicon)	312.5MHz	2.25 V ~ 3.6 V
DSC1122AE2-156.2500T	Microchip可编程振荡器	DSC1122	Active	MEMS (Silicon)	156.25MHz	2.25 V ~ 3.6 V
DSC1122AI1-133.3300T	Microchip可编程振荡器	DSC1122	Active	MEMS (Silicon)	133.33MHz	2.25 V ~ 3.6 V
DSC1122AI1-156.2500T	Microchip可编程振荡器	DSC1122	Active	MEMS (Silicon)	156.25MHz	2.25 V ~ 3.6 V
DSC1122AI1-159.3750T	Microchip可编程振荡器	DSC1122	Active	MEMS (Silicon)	159.375MHz	2.25 V ~ 3.6 V
DSC1122AI2-025.0000T	Microchip可编程振荡器	DSC1122	Active	MEMS (Silicon)	25MHz	2.25 V ~ 3.6 V
DSC1122AI5-375.0000T	Microchip可编程振荡器	DSC1122	Active	MEMS (Silicon)	375MHz	2.25 V ~ 3.6 V
DSC1122BE1-025.0000T	Microchip可编程振荡器	DSC1122	Active	MEMS (Silicon)	25MHz	2.25 V ~ 3.6 V
DSC1122CE2-150.0000T	Microchip可编程振荡器	DSC1122	Active	MEMS (Silicon)	150MHz	2.25 V ~ 3.6 V
DSC1122CI1-155.5200T	Microchip可编程振荡器	DSC1122	Active	MEMS (Silicon)	155.52MHz	2.25 V ~ 3.6 V
DSC1122CI2-148.3516T	Microchip可编程振荡器	DSC1122	Active	MEMS (Silicon)	148.3516MHz	2.25 V ~ 3.6 V
DSC1122CI2-148.5000T	Microchip可编程振荡器	DSC1122	Active	MEMS (Silicon)	148.5MHz	2.25 V ~ 3.6 V
DSC1122CI2-155.5200T	Microchip可编程振荡器	DSC1122	Active	MEMS (Silicon)	155.52MHz	2.25 V ~ 3.6 V
DSC1122CL1-156.2500T	Microchip可编程振荡器	DSC1122	Active	MEMS (Silicon)	156.25MHz	2.25 V ~ 3.6 V
DSC1122NE2-156.2500T	Microchip可编程振荡器	DSC1122	Active	MEMS (Silicon)	156.25MHz	2.25 V ~ 3.6 V
DSC1122NI1-078.1250T	Microchip可编程振荡器	DSC1122	Active	MEMS (Silicon)	78.125MHz	2.25 V ~ 3.6 V
DSC1122NI1-133.3300T	Microchip可编程振荡器	DSC1122	Active	MEMS (Silicon)	133.33MHz	2.25 V ~ 3.6 V
DSC1123AI2-148.3516T	Microchip可编程振荡器	DSC1123	Active	MEMS (Silicon)	148.3516MHz	2.25 V ~ 3.6 V
DSC1123AI2-155.5200T	Microchip可编程振荡器	DSC1123	Active	MEMS (Silicon)	155.52MHz	2.25 V ~ 3.6 V
DSC1123AI2-212.5000T	Microchip可编程振荡器	DSC1123	Active	MEMS (Silicon)	212.5MHz	2.25 V ~ 3.6 V
DSC1123AI5-110.0000T	Microchip可编程振荡器	DSC1123	Active	MEMS (Silicon)	110MHz	2.25 V ~ 3.6 V
DSC1123AL2-125.0000T	Microchip可编程振荡器	DSC1123	Active	MEMS (Silicon)	125MHz	2.25 V ~ 3.6 V
DSC1123BE2-100.0000T	Microchip可编程振荡器	DSC1123	Active	MEMS (Silicon)	100MHz	2.25 V ~ 3.6 V
DSC1123BE2-125.0000T	Microchip可编程振荡器	DSC1123	Active	MEMS (Silicon)	125MHz	2.25 V ~ 3.6 V
DSC1123CE2-062.0000T	Microchip可编程振荡器	DSC1123	Active	MEMS (Silicon)	62MHz	2.25 V ~ 3.6 V
DSC1123CE2-148.3516T	Microchip可编程振荡器	DSC1123	Active	MEMS (Silicon)	148.3516MHz	2.25 V ~ 3.6 V
DSC1123CE2-148.5000T	Microchip可编程振荡器	DSC1123	Active	MEMS (Silicon)	148.5MHz	2.25 V ~ 3.6 V
DSC1123CE2-200.0000T	Microchip可编程振荡器	DSC1123	Active	MEMS (Silicon)	200MHz	2.25 V ~ 3.6 V

产品特性：低均方根相位抖动:< 1 ps(典型值。)，高稳定性:10、25、50 ppm，工业级:-40摄氏度至85摄氏度，延伸文件系统商用:-20摄氏度至70摄氏度，高电源噪声抑制:-50dBc，短交货期:2周，宽频率。范围:2.3至460兆赫。2.5毫米x 2.0mm毫米、3.2毫米x 2.5mm毫米、5.0毫米x 3.2mm毫米和7.0毫米x 5.0mm毫米，符合军用标准883，MTF比石英晶体振荡器高20倍，低电流消耗，电源电压范围为2.25V至3.6V，待机和输出使能功能，无铅且符合RoHS标准，提供LVDS和HCSL版本.
应用程序：存储区域网络，SATA、SAS、光纤通道，无源光网络，-EPON，10G-EPON，GPON，10G-GPON 以太网 - 1G、10GBASE-T/KR/LR/SR和FCoE，高清/标清/SDI视频和监控.